The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 1997
Filed:
Mar. 10, 1995
Applicant:
Inventor:
Noriaki Kodama, Tokyo, JP;
Assignee:
NEC Corporation, , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
36518529 ; 3651853 ; 36518524 ; 36518514 ; 365218 ; 36518901 ;
Abstract
In a nonvolatile semiconductor device having a floating gate formed over a semiconductor substrate, a control gate formed over the floating gate, a source region and a drain region formed within the semiconductor substrate, an erase or write operation is carried out by Fowler-Nordheim tunneling, so that carriers such as electrons and holes are expelled from the floating gate to one of the source and drain regions. Thereafter, carriers of a channel current flowing between the source and drain regions are enhanced and injected into the floating gate, thus converging a threshold voltage of the device.