The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 1997
Filed:
Nov. 17, 1995
Takayuki Ohmura, Hamamatsu, JP;
Tomoyuki Okada, Hamamatsu, JP;
Hiroyuki Kyushima, Hamamatsu, JP;
Yousuke Oohashi, Hamamatsu, JP;
Hamamatsu Photonics K.K., Shizuoka-ken, JP;
Abstract
A mesh electrode 9 is provided over an incident opening 7a of the electron multiplication portion 6. In the electron multiplication portion 6, a dynode group Dy is located downstream of a first dynode Dy1 for multiplying electrons supplied from the first dynode Dy1. The dynode group Dy is provided in the vicinity of the curvature center of the first dynode Dy1. A plate electrode 10 and a mesh electrode 9 are supplied with a potential intermediate between the potentials applied to the first dynode Dy1 and applied to the dynode group Dy. Accordingly, the electric field formed due to the potential difference between the first dynode Dy1 and the dynode group Dy is surrounded by the intermediate potentials. The electric field is therefore uniformly distributed over the region from the vicinity of the first dynode Dy1 toward the dynode group Dy.