The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 1997
Filed:
Jun. 07, 1995
Applicant:
Inventor:
Yasutoshi Okuno, Tsukuba, JP;
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438478 ; 148D / ; 148D / ; 148D / ; 148D / ; 438763 ; 438979 ; 438507 ;
Abstract
A resonant tunneling diode (400) made of a germanium quantum well (406) with silicon oxide tunneling barriers (404, 408). The silicon oxide tunneling barriers (404, 408) plus germanium quantum well (406) may be fabricated by oxygen segregation from germanium oxides to silicon oxides.
Quick Actions:
Okuno, Yasutoshi. (1997). Silicon oxide germanium resonant tunneling (U.S. Patent No. 5616515). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5616515
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