The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 1997
Filed:
May. 31, 1995
Applicant:
Inventors:
Atsushi Toda, Kanagawa, JP;
Daisuke Imanishi, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117104 ; 117956 ;
Abstract
A method for growth of II-VI compound semiconductors grows a p-type II-VI compound semiconductor such as a p-type ZnSe by vapor deposition such as metallorganic chemical vapor deposition and molecular beam epitaxy using gaseous materials. The method uses as a p-type dopant an organic compound including at least one nitrogen atom and at least two groups of atoms each having a molecular weight larger than 12 and both combined with the nitrogen atom. One of such organic compounds is di-isopropylamine.