The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 1997

Filed:

Feb. 09, 1995
Applicant:
Inventors:

Reuven Holzer, Herzlia, IL;

Rafael Fried, Caesarea, IL;

Assignee:

National Semiconductor Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ;
U.S. Cl.
CPC ...
327 58 ; 327 50 ; 327 62 ; 327 79 ;
Abstract

An accurate peak-to-peak detector, readily implemented in CMOS and consuming low power. The peak-to-peak detector includes a clamp portion (circuit) followed by a peak-detect portion (circuit), each of which circuits includes at least one active component (e.g., transistor). The clamp circuit receives an input signal having an alternating current (AC) component via an input coupling capacitor which outputs a voltage on a line to the peak-detect circuit. The clamp circuit includes either a passive load element (e.g., a resistor), or an active load element (e.g., a CMOS transistor), so that the clamp circuit bleeds current from the input coupling capacitor, and any slow drift in the DC level of the input voltage will be followed. The peak-detect circuit follows the voltage output by the coupling capacitor, and includes either a passive load element (e.g., a resistor) or an active load element (e.g., a CMOS transistor), to bleed current from the peak-detected signal so that decreases in peak-to-peak amplitude of the input voltage will be followed. Various CMOS embodiments are described which use only N-Channel transistors, only P-Channel transistors, or both N-Channel and P-Channel transistors.


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