The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 1997
Filed:
Jul. 21, 1995
Applicant:
Inventor:
Masao Mochizuki, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01P / ; H01P / ;
U.S. Cl.
CPC ...
257276 ; 257275 ; 257728 ; 233246 ; 233247 ;
Abstract
MMIC elements are formed on the surface of a GaAs semiconductor substrate. Rectangular U grooves having V-shaped bottoms are formed on the bottom surface of the substrate up to the surface of the substrate under the electrode and ground terminals of the MMIC elements. MIM capacitors and coils are formed on the side walls of the grooves and the bottom surface of the substrate and are connected to the electrode and ground terminals. This arrangement provides the MIM capacitors with large capacitance and the coils with large inductance without increasing chip size.