The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 1997
Filed:
Apr. 21, 1995
Applicant:
Inventor:
Yoshiro Goto, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 56 ; 437 57 ; 437 58 ; 437 35 ; 437 41 ;
Abstract
In a method for manufacturing a CMIS transistor, after gate electrodes are formed, deep P type impurity regions and shallow N type impurity regions are formed within both of a PMOS area and an NMOS area. Then, after sidewall insulating layers are formed on sidewalls of the gate electrodes, P type impurity ions are introduced into the PMOS area and N type impurity ions are introduced into the NMOS area.