The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 1997

Filed:

Dec. 01, 1994
Applicant:
Inventors:

Nguyen D Bui, San Jose, CA (US);

John T Yue, Los Altos, CA (US);

Van Pham, Milpitas, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnnyvale, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01R / ;
U.S. Cl.
CPC ...
324766 ; 324716 ; 324719 ;
Abstract

A substantially constant current is conducted in a first direction through an interconnect structure having a barrier layer to determine the lifetime of the structure in the first current direction. A substantially identical current is conducted in a second direction through a substantially identical interconnect structure to determine the lifetime of the structure in the second current direction. These tests are repeated for identical structures but having different barrier layer thicknesses. The results of these lifetime tests are compared to determine the barrier layer's effect on electromigration in the structure, which can be used to design the barrier layer to optimize the structure's lifetime and speed.


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