The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 1997
Filed:
May. 05, 1995
Takahiko Arakawa, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor integrated circuit including a transistor portion having operating characteristics which are not varied by wiring operation, and a method of fabricating the same are disclosed. A PMOS transistor portion (PT) includes first layer metal lines (7A) extending outwardly beyond P-type diffused regions (3) and permitted to have contact holes (6) therein over regions external to the P-type diffused regions (3). That is, the first layer metal lines (7A) have out-of-diffused-region connecting regions for electrical connection over the regions external to the P-type diffused regions (3). Likewise, an NMOS transistor portion (NT) includes first layer metal lines (7A) extending outwardly beyond N-type diffused regions (5) and permitted to have contact holes (6) therein over regions external to the N-type cliffused regions (5).