The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 1997
Filed:
Feb. 24, 1995
Applicant:
Inventors:
Akiko Gomyo, Tokyo, JP;
Tohru Suzuki, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01S / ; H01S / ;
U.S. Cl.
CPC ...
257184 ; 257200 ; 372-7 ; 372 48 ;
Abstract
A heterojunction semiconductor device has a plurality of ordered phase alloy layers. Either the whole or a part of each of the ordered phase alloy layers has a crystal structure (triple-period structure) in which the ordered alloy is of a composition corresponding to the [111]A direction and an anion composition modulation period that is triple that of a disordered structure. The double-period structure may alternatively be used. The triple-period or double-period structure applied to the layer structure of the heterostructure semiconductor device results in a reduction of the bandgap.