The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 1997
Filed:
Feb. 06, 1995
Applicant:
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 41 ; 437192 ; 437200 ;
Abstract
A semiconductor device includes a semiconductor substrate having a main surface, and a laminated structure. The laminated structure is made up of a nonmonocrystalline silicon layer and a layer of refractory metal or refractory metal silicide, formed on the nonmonocrystalline silicon layer, and formed on the main surface of the semiconductor substrate. The resistivity of the nonmonocrystalline silicon layer is set at less than substantially 1.times.10.sup.-2 .OMEGA..multidot.cm by doping an impurity thereinto at the time of deposition of the nonmonocrystalline silicon layer.