The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 1997
Filed:
Oct. 18, 1993
Applicant:
Inventors:
Donovan L Barrett, Penn Hills Twp., PA (US);
Hudson M Hobgood, Murrysville, PA (US);
James P McHugh, Wilkins Twp., PA (US);
Richard H Hopkins, Murrysville, PA (US);
Assignee:
Northrop Grumman Corp., Los Angeles, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B / ;
U.S. Cl.
CPC ...
252 / ; 117951 ; 437100 ; 148D / ; 148 33 ; 252516 ; 501 88 ;
Abstract
A substrate for use in semiconductor devices, fabricated of silicon carbide and having a resistivity of greater than 1500 Ohm-cm. The substrate being characterized as having deep level impurities incorporated therein, wherein the deep level elemental impurity comprises one of a selected heavy metal, hydrogen, chlorine and fluorine. The selected heavy metal being a metal found in periodic groups IIIB, IVB, VB, VIB, VIIB, VIIIB, IB and IIB.