The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 1997

Filed:

Mar. 16, 1995
Applicant:
Inventors:

Tadashi Kimura, Kyoto, JP;

Yoshikazu Yoshida, Osaka, JP;

Shinichi Mizuguchi, Osaka, JP;

Yasunao Okazaki, Kusatsu, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
1187 / ; 1566431 ; 427575 ; 1187 / ;
Abstract

The plasma processing apparatus of the invention generates plasma from a reactive gas with microwave power so as to process a substrate. The plasma processing apparatus includes: a vacuum chamber having an evacuation means and reactive gas inlet ports; a means for holding the substrate to be processed which is disposed inside the vacuum chamber; a dielectric plate disposed at a position facing the substrate to be processed so as to form an integral part of the vacuum chamber; a metal conductor plate disposed on an outer plane of the dielectric plate not facing the vacuum chamber so as to face the substrate to be processed; and a means for supplying microwave power substantially inverse-radially from a circumferential side of the dielectric plate towards a center thereof. Under the above construction, the microwave is supplied substantially inverse-radially from the circumferential side of the dielectric plate towards the center thereof, thereby generating a surface wave on the dielectric plate facing the substrate. As a result, the microwave power is uniformly radiated along radial directions into the vacuum chamber and plasma is uniformly generated from a reactive gas over a large area, so that even a large substrate may be processed uniformly.


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