The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 1997

Filed:

Dec. 21, 1995
Applicant:
Inventor:

Toshio Komuro, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365149 ; 365207 ; 365210 ;
Abstract

In order to provide a multi-valued DRAM with an access time comparable to ordinary binary DRAMs, a potential difference generated by a memory cell between a pair of bit-lines is delivered to N-1 sets of sense amplifiers. Each delivered potential difference is shifted by a predetermined value for each sense amplifier for classifying the potential difference into N levels. A refreshing potential for the memory cell is obtained from outputs of the sense amplifiers activated with sense amplifier activating signals having potentials predetermined for each sense amplifier.


Find Patent Forward Citations

Komuro, Toshio. (1997). Multi-valued semiconductor memory device (U.S. Patent No. 5610855). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5610855

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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