The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 1997
Filed:
Sep. 29, 1995
Keiichi Yodoshi, Moriguchi, JP;
Akira Ibaraki, Moriguchi, JP;
Masayuki Shono, Moriguchi, JP;
Shoji Honda, Moriguchi, JP;
Takatoshi Ikegami, Moriguchi, JP;
Nobuhiko Hayashi, Moriguchi, JP;
Koutarou Furusawa, Moriguchi, JP;
Atushi Tajiri, Moriguchi, JP;
Toru Ishikawa, Moriguchi, JP;
Kenichi Matsukawa, Moriguchi, JP;
Teruaki Miyake, Moriguchi, JP;
Takenori Goto, Moriguchi, JP;
Mitsuaki Matsumoto, Moriguchi, JP;
Daisuke Ide, Moriguchi, JP;
Yasuyuki Bessho, Moriguchi, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.