The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 1997

Filed:

Sep. 08, 1995
Applicant:
Inventor:

Byung J Cho, Kyungki-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 43 ; 437 52 ; 437203 ;
Abstract

A method for manufacturing a non-volatile memory cell which can improve the reliability and electrical operation characteristics of a memory cell by making a recess structure of a silicon substrate of a channel region in order to increase capacitance coupling ratio between a control gate and a floating gate is disclosed.


Find Patent Forward Citations

Cho, Byung. (1997). Method for manufacturing a non-volatile memory cell (U.S. Patent No. 5610091). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5610091

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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