The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 1997
Filed:
Apr. 28, 1995
Takenori Goto, Neyagawa, JP;
Nobuhiko Hayashi, Osaka, JP;
Teruaki Miyake, Tottori, JP;
Mitsuaki Matsumoto, Osaka, JP;
Kenichi Matsukawa, Sumoto, JP;
Daisuke Ide, Higashiosaka, JP;
Koutarou Furusawa, Higashiosaka, JP;
Akira Ibaraki, Hirakata, JP;
Keiichi Yodoshi, Kawachinagano, JP;
Tatsuya Kunisato, Takatsuki, JP;
Sanyo Electric Co., Ltd., Osaka-fu, JP;
Abstract
In a semiconductor laser device comprising an n-type cladding layer, an active layer formed on the cladding layer, a p-type cladding layer formed on the active layer, and a p-type saturable light absorbing layer provided in the p-type cladding layer, the current confinement width for confining current injected into the active layer being W, the thickness d.sub.a of the active layer, the optical confinement factor .GAMMA..sub.a of the active layer, the thickness d.sub.s of the saturable light absorbing layer, the optical confinement factor .GAMMA..sub.s of the saturable light absorbing layer, and the light spot size S on a facet of the semiconductor laser device are so set as to satisfy a predetermined relationship. The reflectivity on a light output facet is set in the range of 10 to 20%.