The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 1997
Filed:
Nov. 21, 1994
Applicant:
Inventor:
Alexander Kalnitsky, Grenoble, FR;
Assignee:
SGS-Thomson Microelectronics S.A., Saint Genis Pouilly, FR;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257314 ; 257325 ; 257405 ; 257903 ;
Abstract
A semiconductor device is described, incorporating electron traps at the interface between a semiconductor substrate and a gate dielectric layer of an insulated gate field effect transistor, such device being capable of retaining charge in the electron traps for a certain time, allowing volatile memory circuits to be produced wherein each cell occupies only the area required for a single transistor.