The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 1997
Filed:
Dec. 27, 1994
Sachiko Shibuya, Yokohama, JP;
Masayuki Yoshida, Kawasaki, JP;
Nobuyoshi Chida, Kitakami, JP;
Osamu Matsumoto, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
In the memory cell matrix of a semiconductor integrated circuit device having a non-volatile semiconductor memory cell portion and a logic portion, a second-layered Al wires are formed on the first-layered Al wires, with an interlayer insulating film interposed therebetween. The pattern of the second-layered Al wires is the same as that of the first-layered Al wires. This structure reduces the labor for designing mask data, and increases the coating ratio of a resist to an Al layer while minimizing a reduction in the transmittance of ultraviolet ray. As a result, the amount of a reaction compound supplied from the resist into the Al layer for forming the second-layered Al wires increases, which prevents the second-layered Al wires from being undercut. Thus, the second and subsequent-layered Al wires of the logic portion can be effectively prevented from being thinned.