The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 1997
Filed:
Jul. 18, 1996
Applicant:
Inventors:
Ryuichi Ugajin, Kanagawa, JP;
Toshiyuki Sameshima, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 24 ; 257 27 ; 257192 ;
Abstract
A field effect transistor has a quantum dot array in its channel region. The quantum dot array is composed of a plurality of quantum dots arranged adjacent to each other on a common plane. Each quantum dot may be made of heterojunction of compound semiconductors or junction of a semiconductor and an insulator. The field effect transistor has a differential negative resistance.