The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 1997
Filed:
Dec. 20, 1994
Mitsugu Sato, Katsuta, JP;
Yoichi Ose, Mito, JP;
Satoru Fukuhara, Katsuta, JP;
Hideo Todokoro, Tokyo, JP;
Makoto Ezumi, Katsuta, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A scanning electron microscope suitable for producing an image of high resolution by detecting secondary electrons and backscattered electrons generated from a specimen at a low accelerating voltage in a separate or synthesis fashion. In the scanning electron microscope electric and magnetic fields for separating trajectories of backscattered electrons and secondary electrons generated from a specimen are established, and a backscattered electron detector for detecting generated backscattered electrons is disposed on the trajectory of the backscattered electrons. According to the microscope, since secondary electrons and backscattered electrons can be detected efficiently in a separate fashion even at a low accelerating voltage of several kilovolts or less and besides the detector does not exert the deflection action on a primary electron beam, backscattered and secondary electron images of high resolution can be obtained.