The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 1997
Filed:
Feb. 02, 1994
Applicant:
Inventor:
Jeong S Byun, Chungcheongbuk-do, KR;
Assignee:
LG Semicon Co., Ltd., Chungcheongbuk-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 41 ; 437160 ; 437200 ; 437950 ;
Abstract
A method for fabricating an MOS transistor having a source/drain region of shallow junction and a thin silicide film is disclosed. The present method takes advantage of the phase separation of the Ti-excessed titanium nitride film and is capable of forming a thin silicide film in a once metal thermal annealing process. The method employs dopant implant to the titanium nitride and silicide and thermal anneal for diffusion to form source and drain regions.