The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 1997
Filed:
Jan. 27, 1995
Applicant:
Inventors:
Jong M Choi, Seoul, KR;
Jong K Kim, Chungcheongbuk-do, KR;
Assignee:
Goldstar Electron Co., Ltd., , KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 21 ; 437 41 ; 437 62 ; 257 63 ; 257307 ;
Abstract
A structure and fabrication method for a thin film transistor which is suitable for an SRAM memory cell. The thin film transistor structure includes an insulating substrate and a semiconductor layer formed as a wall on the insulation substrate. A gate insulation film is formed on the semiconductor layer and over the entire surface of the insulation substrate. A gate electrode formed on the gate insulation film at the center part of the semiconductor layer. Impurity regions are formed in the semiconductor layer on both sides of the gate electrode.