The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 1997
Filed:
May. 08, 1995
Dan Botez, Madison, WI (US);
Charles A Zmudzinski, Redondo Beach, CA (US);
Luke J Mawst, Sun Prairie, WI (US);
Wisconsin Alumni Research Foundation, Madison, WI (US);
Abstract
A semiconductor laser is formed with an array of a small number (two to ten) antiguide elements each containing a portion of the active region of the semiconductor laser. Interelement structures between the antiguide elements are formed to have a relatively high interelement loss coefficient (at least 100 cm.sup.-1), providing excellent discrimination between the resonant in-phase mode and the unwanted nonresonant modes. Lateral reflectors may be utilized at the edge of the array to reflect light back to the array, but are not necessary when the antiguide elements are sufficiently wide and the effective index step between the antiguide elements and interelement structures is sufficiently large. Because only a relatively small number (10 or less) of antiguide elements are utilized, fabrication tolerances are relatively large and practical devices may be produced with satisfactory yields. The semiconductor laser of the invention may be utilized as a master oscillator integrated with flared antiguided master-oscillator power-amplifiers (MOPA) to provide uniform MOPA near-field intensity profiles at high power levels.