The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 1997
Filed:
Sep. 26, 1994
Jerry J Heep, Weatherford, TX (US);
Douglas R Curtis, Los Gatos, CA (US);
Tandy Corporation, Ft. Worth, TX (US);
Abstract
An overvoltage protection circuit for a CMOS electronic multimeter circuit uses a pair of complementary field-effect protection transistors connected to each input line of the meter circuit. The gate electrodes of the protection transistors are connected to bias voltage sources which provide bias voltages with magnitudes slightly less than the meter power supply voltages. The protection transistors go into conduction when an overvoltage condition causes the voltage on the input to exceed the bias voltages and the conducting protection transistors clamp the input voltage to substantially the bias voltage. Current caused by an overvoltage condition is shunted to ground thereby avoiding a charging condition in the power supplies.