The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 1997
Filed:
Dec. 26, 1995
William W Hooper, Westlake Village, CA (US);
Michael G Case, Thousand Oaks, CA (US);
Chanh N Nguyen, Newbury Park, CA (US);
Hughes Electronics, Los Angeles, CA (US);
Abstract
A high-voltage bipolar transistor and fabrication method that comprises a shield electrode (or field-termination electrode) located between bond pads and underlying semiconductor material. The shield electrode is sandwiched between two isolating dielectric layers. High-voltage applied to the bond pad establishes an electric field between the bond pad and the shield electrode), preventing field penetration into and inversion of the underlying semiconductor material. Using this overlapping field-termination structure, low leakage current and high breakdown voltage is maintained in the transistor. The present overlapping field-termination structure provides an effective field termination underneath the bond pads, and because of its overlapping design, provides for a more compact transistor.