The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 1997
Filed:
Sep. 01, 1994
Mitsubishi Chemical Corporation, Tokyo, JP;
Abstract
The invention includes a Group III-V compound semiconductor that comprises (1) a thin crystal film of A.sub.1.sup.III As.sub.w P.sub.1-w, wherein A.sub.1.sup.III represents a Group III element with Al composition of less than 0.3, 0.5<w.ltoreq.1, formed on a semiconductor crystal substrate or on an epitaxial film grown on the substrate, a thin crystal film of B.sup.III As, wherein B.sup.III represents a Group III element with Al composition of not less than 0.45, formed on the A.sub.1.sup.III As.sub.w P.sub.1-w film, and a thin film of C.sub.1.sup.III As.sub.x P.sub.1-x, wherein C.sub.1.sup.III represents a Group III element with Al composition of less than 0.3, 0.ltoreq.x 0.5, formed on the B.sup.III As film; or (2) a thin film of A.sub.2.sup.III As.sub.u P.sub.1-u, wherein A.sub.2.sup.III represents a Group III element with In composition of not less than 0.3, 0.ltoreq.u.ltoreq.1, formed on a semiconductor crystal substrate or on an epitaxial film grown on the substrate, a thin crystal film of B.sup.III As, wherein B.sup.III represents a Group III element with Al composition of not less than 0.45, formed on the A.sub.2.sup.III As.sub.u P.sub.1-u film, and a thin film of C.sub.2.sup.III As.sub.z P.sub.1-z, wherein C.sub.2.sup.III represents a Group III element, 0.ltoreq.z.ltoreq.1, formed on the B.sup.III As film.