The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 1997
Filed:
Oct. 17, 1994
Applicant:
Inventors:
Eiichi Ando, Yokohama, JP;
Akira Mitsui, Yokohama, JP;
Junichi Ebisawa, Tokyo, JP;
Koichi Suzuki, Yokohama, JP;
Kiyoshi Matsumoto, Tokyo, JP;
Takuji Oyama, Yokohama, JP;
Assignee:
Asahi Glass Company Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
20419223 ; 20419215 ; 20419226 ;
Abstract
The present invention relates to a film comprising silicon dioxide as the main component, which contains Zr, etc., and a method for forming it by reactive DC sputtering. It makes it possible to form reflection preventive films, alkali barrier films and various multi-layered films such as multi-layered films for anti-iridescent glass, which contain said film comprising silicon dioxide as the main component, by a physical vapor deposition method without breaking a vacuum.