The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 1997
Filed:
Nov. 23, 1994
Applicant:
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Kanagawa-ken, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 43 ; 372 46 ;
Abstract
A semiconductor optical device includes a n-clad layer, an active layer formed on the n-type clad, a carrier reservoir layer formed on the active layer, and a p-clad layer formed on the carrier reservoir layer. The thickness of the carrier reservoir layer is in a range where the oscillation wavelength shifts in a short wavelength direction with increasing driving current.