The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 1997
Filed:
May. 19, 1995
Sammy S Cheung, Pleasanton, CA (US);
Cypress Semiconductor, Corporation, San Jose, CA (US);
Abstract
A memory circuit with a low power programming voltage switch for reduced leakage current during a read operation. The apparatus includes a high voltage switch which, in a programming mode receives a high (e.g. programming) voltage and in another mode (reading) receives a normal range voltage, and a line driver which drivers a selection or non-selection voltage into word lines or column select lines into a memory array. During a read mode, the deselected line drivers and high voltage switches are operated in a reduced leakage current mode such that leakage current is forced through selected line drivers and their high voltage switches before being forced through the deselected line drivers such that the leakage current is limited to the number of selected line drivers.