The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 1997

Filed:

Jul. 12, 1995
Applicant:
Inventor:

David J Pedder, Long Compton, GB;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01G / ;
U.S. Cl.
CPC ...
361277 ; 361271 ; 361278 ;
Abstract

In a multilayer metallisation/dielectric structure on a silicon substrate a trimmable capacitor is formed between two of the higher metallisation layers, with one layer being segmented and the individual segments connected by way of one or more vias and respective narrow links to one terminal of the capacitor. The narrow links are formed from titanium tungsten on the oxide isolated silicon substrate.


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