The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 1997
Filed:
Jun. 16, 1994
Kotaro Mitsui, Itami, JP;
Zenpei Kawazu, Itami, JP;
Kazuo Mizuguchi, Itami, JP;
Seiji Ochi, Itami, JP;
Yuji Ohkura, Itami, JP;
Norio Hayafuji, Itami, JP;
Hirotaka Kizuki, Itami, JP;
Mari Tsugami, Itami, JP;
Akihiro Takami, Itami, JP;
Manabu Katoh, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
In a method for fabricating an infrared detector, initially, a CdHgTe layer of a first conductivity type is produced on a front surface of a semiconductor substrate, a plurality of spaced apart CdHgTe regions of a second conductivity type, opposite the first conductivity type, are produced at the surface of the first conductivity type CdHgTe layer, and part of the surface of the first conductivity type CdHgTe layer between the second conductivity type CdHgTe regions is selectively irradiated with a charged particle beam to evaporate Hg atoms from that part, whereby a CdHgTe separation region of the first conductivity type and having a Cd composition larger than that of the first conductivity type CdHgTe layer is produced penetrating through the first conductivity type CdHgTe layer and surrounding each of the second conductivity type CdHgTe regions. Therefore, a highly-integrated high-resolution infrared detector with no crosstalk between pixels is achieved.