The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 1997

Filed:

Jan. 04, 1996
Applicant:
Inventors:

Michiko Kobayashi, Kawasaki, JP;

Syun-ichi Fukuyama, Kawasaki, JP;

Yoshihiro Nakata, Kawasaki, JP;

Masanori Naitou, Kawasaki, JP;

Hiroshi Kudo, Kawasaki, JP;

Yoshiyuki Ohkura, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
437238 ; 437235 ; 427228 ; 4271262 ;
Abstract

Process for the production of semiconductor devices comprising the steps of applying a solution of the specified polycarbosilane in a solvent onto a substrate having electrically conductive components fabricated therein, and curing the coated layer of the polycarbosilane at a temperature of not less than 350.degree. C. in an oxidizing atmosphere to thereby covert the polycarbosilane layer to a silicon oxide layer. The resulting silicon oxide layer has a planarized surface and has no cracking and accordingly is useful as a dielectric layer and a protective layer in the production of semiconductor devices having a high reliability.

Published as:
JPH07118007A; US5602060A; JP3418458B2;

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Kobayashi, Michiko. (1997). Process for the production of semiconductor devices (U.S. Patent No. 5602060). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5602060

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