The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 1997
Filed:
Dec. 19, 1995
William C Terrell, Thousand Oaks, CA (US);
Robert N Deming, Thousand Oaks, CA (US);
Russell S Hinds, Oxnard, CA (US);
Vitesse Semiconductor Corporation, Camarillo, CA (US);
Abstract
An input buffer circuit is implemented in a compound semiconductor technology such as Gallium Arsenide and converts silicon semiconductor logic levels such as those produced by CMOS and TTL integrated circuits and converts them to logic levels compatible with circuits manufactured in compound semiconductor technology. The input buffer employs a balanced input circuit designed to produce an output voltage representing the switch-point of the compound semiconductor technology when the voltage received from a silicon semiconductor circuit equals the switch-point of the silicon semiconductor circuit. Otherwise, the output voltage of the input buffer is proportional to the difference between the voltage received from the silicon semiconductor circuit and the switch-point of the silicon semiconductor circuit. The balanced input circuit minimizes variations in its output voltage due to variations in power supply voltage, circuit temperature and process parameters. The source-follower configuration of the balanced input also neither sources current to or sinks current from the driving silicon circuit. An output buffer circuit provides a stable high impedance tri-state output in a compound semiconductor technology by eliminating the effects of leakage current common to such technologies. The circuit employs a second pull-down transistor that sinks a small leakage current, thereby positively biasing the source of a first pull-down transistor which turns the first pull-down transistor hard.