The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 1997
Filed:
Feb. 08, 1995
Hiroshi Suzunaga, Tokyo, JP;
Kabushiki Kaisha Toshiba, Kanagawa-ken, JP;
Abstract
A semiconductor position sensitive detector has an epitaxial layer of a second conductivity type formed on a semiconductor substrate of a first conductivity type. A first diffusion layer of the first conductivity type is formed in said epitaxial layer so as to isolate a rectangular portion of this epitaxial layer from the rest. A second diffusion layer of the first conductivity type is further formed in said rectangular portion of the epitaxial layer, in order to increase the resistance value of the epitaxial layer. In addition, due to the formation of the second diffusion layer, two p-n junctions having photoelectric transfer ability are formed in this device. So, a semiconductor position sensitive detector having excellent photoelectric characteristics can be obtained.