The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 1997
Filed:
Jul. 26, 1995
Masanori Tsukamoto, Kanagawa, JP;
Tetsuo Gocho, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A semiconductor device in which patterning is effected using a silicon oxynitride (SiON) based thin film as an anti-reflection film and in which electrical properties are prohibited from being deteriorated by hydrogen contained in the SiON based thin film. The semiconductor device has a substrate, a gate insulating film formed on the surface of the substrate, a gate electrode formed on the gate insulating film, and a first antireflection film having a pattern in common with the gate electrode. The semiconductor device also has a hydrogen permeation prohibiting film formed between the gate insulating film and the first antireflection film. The first antireflection film contains hydrogen and is formed on the gate electrode.