The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 1997
Filed:
Aug. 16, 1994
Kazuo Yano, Hino, JP;
Tomoyuki Ishii, Kodaira, JP;
Takashi Hashimoto, Iruma, JP;
Koichi Seki, Hino, JP;
Masakazu Aoki, Tokorozawa, JP;
Takeshi Sakata, Kunitachi, JP;
Yoshinobu Nakagome, Hamura, JP;
Kan Takeuchi, Kodaira, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.