The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 1997
Filed:
May. 29, 1996
Ichimatsu Abiko, Tokyo, JP;
Yukio Nakamura, Tokyo, JP;
Katsuzo Kaminishi, Tokyo, JP;
Takatoku Shimizu, Tokyo, JP;
Kazuo Tokura, Tokyo, JP;
Yasuo Iguti, Tokyo, JP;
Hiroshi Furuya, Tokyo, JP;
Mituhiko Ogihara, Tokyo, JP;
Masumi Taninaka, Tokyo, JP;
Mio Chiba, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
According to a first aspect of the invention, a light-emitting and light-sensing diode has a doped region with a depth not exceeding 2 .mu.m, for adequate sensitivity, and an impurity concentration of at least 5.times.10.sup.20 atoms/cm.sup.-3, for adequate emission. According to a second aspect of the invention, a light-emitting and light-sensing diode has a doped region with a deep part and a shallow part, and the area of the shallow part is increased to enhance the sensitivity of the diode. This may be done by providing the doped region with a meandering edge, or with one or more interior islands, or by forming the deep and shallow parts separately.