The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 1997
Filed:
Apr. 07, 1995
Satoshi Nakagawa, Muko, JP;
Youji Bitou, Kyoto, JP;
Matsushita Electronics Corporation, Osaka, JP;
Abstract
A manufacturing method of a semiconductor device including the steps of forming an insulating film on a semiconductor substrate, further laminating an aluminum film or an alloy film primarily containing aluminum, forming a mask having a certain pattern on the aluminum film or the alloy film primarily comprising aluminum, removing the aluminum film or the alloy film primarily comprising aluminum by etching the film by chlorination and/or bromination with plasma except the part on which the mask is formed, exposing the film to a gas plasma not liable to deposit or oxidize but capable of substituting fluoride for chloride and/or bromide, or to a gas mixture plasma comprising hydrogen and the above-mentioned gas, washing with water, and removing the mask to provide a manufacturing method of a semiconductor devices which can prevent the occurence of defective goods caused by the corrosion of interconnections comprising an aluminum film, or an alloy film primarily comprising aluminum, reduce manufacturing cost, improve the yield rate and reliability of the semiconductor device.