The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 1997
Filed:
Nov. 21, 1994
Chang-Feng Wan, Dallas, TX (US);
John H Tregilgas, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A hybrid focal plane array has p-n junction photodiodes formed in a substrate (10) of HgCdTe which is passivated by a cap layer (12) of Cd-rich CdTe. The active surface of the HgCdTe substrate is passivated by annealing at a temperature sufficient to support interdiffusion between the Cd-rich CdTe capping layer (12) and the HgCdTe substrate (10). Use of the CdTe capping layer (12) with a slight excess Cd maintains the surface of the HgCdTe substrate (10) in a metal-rich phase condition.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile