The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 1997
Filed:
Jan. 23, 1995
Eui Y Oh, Kwacheon-si, KR;
Goldstar Co., Ltd., Seoul, KR;
Abstract
A thin film transistor and a method of making the same, capable of reducing the step height between an insulating substrate and a gate electrode upon the anodization and thus preventing a short circuit at overlapping portions of the gate electrode and source/drain electrodes. The thin film transistor comprises a first metal layer as a gate electrode formed on an insulating substrate, an anodizable second metal layer having a line width larger than that of the first metal layer so as to cover the first metal layer, and an anodized film as a first gate insulating film formed by anodizing the second metal layer. The gate electrode and the anodized film serve as a gate insulating film. The gate insulating film can be also provided by forming a metal layer with a proper thickness over the insulating substrate, primarily anodizing a portion of the metal layer, forming a gate pattern forming layer over the anodized metal layer portion, and secondarily anodizing the metal layer except for its portion disposed beneath the gate pattern forming layer, to form a gate electrode. The anodized films are used as the gate insulating film.