The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 1997
Filed:
Mar. 03, 1994
Applicant:
Inventor:
Hideo Kawano, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 46 ;
Abstract
A gain-guided type AlGaInP visible light laser diode in accordance with the present invention has a characteristic in that, an n-type current-blocking layer for the current constriction in the double-heterojunction structure in highly doped with n-type impurity so as to prevent the formation of p-type inversion layer therein. When an n-GaAs current-blocking layer is formed on a p-GaInP etching stopper layer doped with zinc, the n-type impurity concentration of the n-GaAs current blocking layer is selected to be 3.times.10.sup.18 cm.sup.-3 or more to achieve a large kink-light output at a low oscillation threshold current.