The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 1997
Filed:
Apr. 21, 1995
Jonathan Lin, Milpitas, CA (US);
Bradley A Sharpe-Geisler, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A CMOS memory cell including a PMOS transistor and an NMOS transistor having a common floating gate with a gate oxide region of both the NMOS and PMOS transistors providing a tunneling window for program and erase. The PMOS and NMOS transistors of the CMOS memory cell are biased so that only the PMOS transistor is utilized during programming and only the NMOS transistor is utilized during erase to prevent depletion of the substrate beneath the tunneling oxide regions. The CMOS memory cell further includes a separate PMOS pass transistor for supplying a program voltage to the source of the PMOS transistor underlying the common floating gate, so that an NMOS threshold does not have to be added to the program voltage.