The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 1997
Filed:
Dec. 06, 1994
Applicant:
Inventors:
Assignee:
Kabushiki Kaisha Tokai Rika Denki Seisakusho, Aichi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257469 ; 257565 ; 257566 ; 257579 ;
Abstract
A bipolar transistor of the multi-emitter type which is provided with a large number of emitter diffusion layers formed in the two-dimensionally arranged state on a base diffusion layer of a substrate, a large number of emitter electrode films formed respectively correspondingly on the emitter diffusion layers, a base electrode film formed on the base diffusion layer, and a collector electrode film formed on the substrate, and the transistor is further provided with a wiring film commonly connected to the large number of emitter electrode films except at least one of the emitter electrode films.