The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 1997
Filed:
Jun. 06, 1995
Robert L Bedard, Mc Henry, IL (US);
Geoffrey A Ozin, Toronto, CA;
Homayoun Ahari, Toronto, CA;
Carol L Bowes, Toronto, CA;
Tong Jiang, Toronto, CA;
David Young, Toronto, CA;
UOP, Des Plaines, IL (US);
Abstract
This invention relates to a semiconductor device comprising at least one p-n junction. The junction is formed from a 'p' semiconductor contacting an 'n' semiconductor. Said device characterized in that at least one of said 'p' or 'n' semiconductor is a nanoporous crystalline semiconducting material. These nanoporous materials have an intracrystalline nanopore system whose pores are crystallographically regular and have an average pore diameter of about 2.5 to about 30 .ANG.. Additionally, they have a band gap of greater than 0 to about 5 eV which band gap can be modified by removing a portion of the templating agent from the pore system of the materials. The materials which have these properties include, metal polychalcogenide compounds, metal sulfides and selenides, metal oxides, and metal oxysulfides. These materials can be used in a large variety of semiconducting devices such as light emitting diodes, bipolar transistors, etc. A process for preparing these nanoporous materials is also presented.