The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 1997

Filed:

Sep. 29, 1995
Applicant:
Inventors:

Michael J Davison, Mesa, AZ (US);

Paul W Dryer, Mesa, AZ (US);

Wendy K Wilson, Mesa, AZ (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
1566371 ; 1566561 ; 1566261 ; 1566421 ; 216 90 ; 216 84 ; 216 93 ;
Abstract

A wet etching process (10) etches sacrificial oxide on a substrate without damaging a polycrystalline silicon structure on the substrate. The etching process (10) includes dipping the substrate in a surfactant (11), submerging a portion of the substrate in a recirculating bath of the etchant while injecting an inert gas into the etchant (12) to purge the etchant of oxygen, rinsing the substrate in deionized water (14), submerging a portion of the substrate in a hydrogen peroxide solution (15), rinsing the substrate for a second time (17), and drying the substrate in isopropyl alcohol vapor (18). The inert gas injected into the etchant displaces oxygen dissolved in the etchant and protects the polycrystalline silicon structure from being etched.


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Davison, Michael. (1997). Method for etching a dielectric layer on a semiconductor (U.S. Patent No. 5593538). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5593538

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