The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 1997
Filed:
Oct. 25, 1995
Applicant:
Inventors:
Mitsuo Soneda, Kanagawa, JP;
Akihiko Hashiguchi, Kanagawa, JP;
Assignee:
Sony Corporation, , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365154 ; 365156 ; 365149 ; 36518901 ;
Abstract
A memory cell circuit which enables reduction of the leak current between a bit line and a memory cell and enables realization of a high speed reading operation and writing operation, wherein a write only circuit and a read only circuit are constructed by a drive transistor and a select transistor, the drive transistor comprising an enhancement type transistor with a threshold voltage set lower than the threshold voltage of the select transistor.
Soneda, Mitsuo. (1997). Memory cell circuit independently controlled in writing and reading (U.S. Patent No. 5592414). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5592414
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile