The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 1997
Filed:
May. 08, 1995
Matsushita Electric Industrial Co., Ltd., Kadoma, JP;
Abstract
In an RF power amplifier, an input-side RF terminal is connected to a gate of an FET via an input-side matching line. A source of the FET is grounded. A drain of the FET is connected to an output-side RF terminal via an output-side matching line. To a line connected to the drain of the FET, a circuit for controlling an output impedance for the secondary harmonic wave is connected, including a first line and a first capacitor. To a line connected to the gate of the FET, a circuit for controlling an input impedance for the secondary harmonic wave is connected, including a second line and a second capacitor. The length of the second line is set so that an electric length thereof becomes longer than one-fourth of the wavelength for the fundamental wave frequency. Thus, an impedance for the harmonic wave is controlled at the input side of the power transistor.