The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 1997
Filed:
Nov. 22, 1994
Applicant:
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257368 ; 257369 ; 257299 ;
Abstract
A semiconductor device comprising a main circuit having a p-channel MOSFET formed on the surface off the substrate and an n-channel MOSFET formed on the p-type well region which is formed on the n-type Si substrate chip), an input/output (I/O) circuit formed on the substrate, and a substrate bias generating circuit formed on the substrate, characterized by controlling the substrate bias generating circuit via the I/O circuit, and varying a bias supplied to the substrate and the p-type well region, in accordance with the operation mode of the main circuit.