The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 1997
Filed:
May. 22, 1995
Jeong S Byun, Chungcheongnam-do, KR;
Sang J Choi, Chungcheongnam-do, KR;
LG Semicon Co., Ltd., Chungcheongbuk-do, KR;
Abstract
A method for fabricating an MOS transistor includes the steps of forming a gate insulating layer on a substrate of a first conductivity-type, forming a gate on the gate insulating layer, forming a disposable layer over an entire surface of the substrate and the gate, the disposable layer having a first conductivity-type impurity and a second conductivity-type impurity of a higher concentration than that of the first conductivity-type impurity, and forming a source and drain area of the second conductivity-type impurity on the substrate by diffusing the second conductivity-type impurity of the disposable layer into the substrate by means of an annealing process, wherein the disposable layer includes a BPSG layer.